LSIC2SD170B50
DIODE SIL CARB 1.7KV 135A TO247
LSIC2SD170B50 Specifications
Mounting Type：
Through Hole
Technology：
SiC (Silicon Carbide) Schottky
Speed：
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：
0 ns
Operating Temperature - Junction：
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If：
1.8 V @ 50 A
Package / Case：
TO-247-2
Supplier Device Package：
TO-247-2
Voltage - DC Reverse (Vr) (Max)：
1700 V
Current - Reverse Leakage @ Vr：
100 µA @ 1700 V
Current - Average Rectified (Io)：
135A
Capacitance @ Vr, F：
3900pF @ 1V, 1MHz
