IXFP34N65X3
MOSFET 34A 650V X3 TO220
IXFP34N65X3 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Current - Continuous Drain (Id) @ 25°C：
34A (Tc)
Drain to Source Voltage (Vdss)：
650 V
Gate Charge (Qg) (Max) @ Vgs：
29 nC @ 10 V
Power Dissipation (Max)：
446W (Tc)
Rds On (Max) @ Id, Vgs：
100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：
5.2V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds：
2025 pF @ 25 V
Supplier Device Package：
TO-220-3 (IXFP)
