IXTH60N20X4
MOSFET ULTRA X4 200V 60A TO-247
IXTH60N20X4 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Package / Case：
TO-247-3
Drain to Source Voltage (Vdss)：
200 V
Power Dissipation (Max)：
250W (Tc)
Gate Charge (Qg) (Max) @ Vgs：
33 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C：
60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
2450 pF @ 25 V
Rds On (Max) @ Id, Vgs：
21mOhm @ 30A, 10V
Supplier Device Package：
TO-247 (IXFH)
