IXFA8N65X2
MOSFET N-CH 650V 8A TO263
IXFA8N65X2 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
5V @ 250µA
Supplier Device Package：
TO-263 (D2PAK)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)：
650 V
Current - Continuous Drain (Id) @ 25°C：
8A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
790 pF @ 25 V
Rds On (Max) @ Id, Vgs：
450mOhm @ 4A, 10V
Power Dissipation (Max)：
150W (Ta)
