IXFH98N60X3
MOSFET ULTRA JCT 600V 98A TO247
IXFH98N60X3 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
600 V
Package / Case：
TO-247-3
Gate Charge (Qg) (Max) @ Vgs：
90 nC @ 10 V
Supplier Device Package：
TO-247 (IXTH)
Vgs(th) (Max) @ Id：
5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds：
6250 pF @ 25 V
Power Dissipation (Max)：
960W (Tc)
Current - Continuous Drain (Id) @ 25°C：
98A (Tc)
Rds On (Max) @ Id, Vgs：
30mOhm @ 49A, 10V
