IXTT110N10L2-TRL
MOSFET N-CH 100V 110A TO268
IXTT110N10L2-TRL Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C：
110A (Tc)
Power Dissipation (Max)：
600W (Tc)
Package / Case：
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs：
260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
10500 pF @ 25 V
Rds On (Max) @ Id, Vgs：
18mOhm @ 55A, 10V
Supplier Device Package：
TO-268 (IXTT)
