IXTU4N70X2
MOSFET N-CH 700V 4A TO251
IXTU4N70X2 Specifications
Mounting Type：
Through Hole
Operating Temperature：
150°C (TJ)
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
10V
Vgs (Max)：
±30V
Vgs(th) (Max) @ Id：
4.5V @ 250µA
Power Dissipation (Max)：
80W (Tc)
Current - Continuous Drain (Id) @ 25°C：
4A (Tc)
Package / Case：
TO-251-3 Stub Leads, IPAK
Drain to Source Voltage (Vdss)：
700 V
Gate Charge (Qg) (Max) @ Vgs：
11.8 nC @ 10 V
Rds On (Max) @ Id, Vgs：
850mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
386 pF @ 25 V
Supplier Device Package：
TO-251-3
