LSIC1MO170E0750
SICFET N-CH 1700V 750OHM TO247-3
LSIC1MO170E0750 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-247-3
Supplier Device Package：
TO-247AD
Drive Voltage (Max Rds On, Min Rds On)：
20V
Vgs(th) (Max) @ Id：
4V @ 1mA
Technology：
SiCFET (Silicon Carbide)
Power Dissipation (Max)：
60W (Tc)
Drain to Source Voltage (Vdss)：
1700 V
Current - Continuous Drain (Id) @ 25°C：
6.2A (Tc)
Vgs (Max)：
+22V, -6V
Rds On (Max) @ Id, Vgs：
1Ohm @ 2A, 20V
Input Capacitance (Ciss) (Max) @ Vds：
200 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs：
13 nC @ 20 V
