LSIC1MO170T0750
SICFET N-CH 1700V 6.4A TO263-7L
LSIC1MO170T0750 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)：
20V
Vgs(th) (Max) @ Id：
4V @ 1mA
Technology：
SiCFET (Silicon Carbide)
Power Dissipation (Max)：
65W (Tc)
Package / Case：
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drain to Source Voltage (Vdss)：
1700 V
Current - Continuous Drain (Id) @ 25°C：
6.4A (Tc)
Vgs (Max)：
+22V, -6V
Supplier Device Package：
TO-263-7L
Rds On (Max) @ Id, Vgs：
1Ohm @ 2A, 20V
Gate Charge (Qg) (Max) @ Vgs：
11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds：
200 pF @ 1000 V
